Organic compounds -- part of the class 532-570 series – Organic compounds – Silicon containing
Reexamination Certificate
2011-03-22
2011-03-22
Price, Elvis O (Department: 1621)
Organic compounds -- part of the class 532-570 series
Organic compounds
Silicon containing
C556S410000, C427S255270
Reexamination Certificate
active
07910765
ABSTRACT:
Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon dioxide (SiO2). The precursors of the invention are amenable to use in low temperature (e.g., <500° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
REFERENCES:
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5424095 (1995-06-01), Clark et al.
patent: 5578530 (1996-11-01), Muroyama et al.
patent: 5744196 (1998-04-01), Laxman et al.
patent: 6013235 (2000-01-01), Brinson et al.
patent: 6383955 (2002-05-01), Matsuki et al.
patent: 6410463 (2002-06-01), Matsuki
patent: 6936548 (2005-08-01), Dussarrat et al.
patent: 7019159 (2006-03-01), Dussarrat et al.
patent: 7064083 (2006-06-01), Dussarrat et al.
patent: 7132723 (2006-11-01), Park et al.
patent: 7531679 (2009-05-01), Wang et al.
patent: 7713346 (2010-05-01), Wang et al.
patent: 2004/0096582 (2004-05-01), Wang et al.
patent: 2004/0138489 (2004-07-01), Wang et al.
patent: 2004/0146644 (2004-07-01), Xiao et al.
patent: 2005/0080285 (2005-04-01), Wang et al.
patent: 2005/0080286 (2005-04-01), Wang et al.
patent: 2008/0160174 (2008-07-01), Wang et al.
patent: 2009/0281344 (2009-11-01), Wang et al.
patent: 2010/0068894 (2010-03-01), Wang et al.
patent: 1441042 (2004-07-01), None
patent: 1149934 (2005-08-01), None
patent: 08-022986 (1996-01-01), None
patent: 2000-080476 (2000-03-01), None
patent: 03046253 (2003-06-01), None
Sergeeva, et al., “Chem. Abstract Accession No. 1960:127948; ‘Synthesis of alkyl- and dialkylbis(1,1-dialkylhydrazino)silanes’”, “Zhurnal Obshceii Khimii”, 1960, pp. 694-695, vol. 30 (CAS Abstract only).
Sergeeva, et al., “Chem. Abstract Accession No. 1959:62140; ‘Synthesis of 1,1-dialkyl-2-(trialkylsilyl) hydrazines’”, “Khim. i Prakt. Primenenie Kremneorg. Soedinenii”, 1958, pp. 235-241, No. 1(CAS Abstract only).
Chen, L.C., et al., “Crystalline silicon carbon nitride: A wide band gap semiconductor”, “Appl. Phys. Letters.”, May 11, 1998, pp. 2463-2465, vol. 72, No. 19.
Yang, Jinchao, et al., “Synthesis of 1,4-disilacyclohexa-2,5-dienes”, “Journal of Organometallic Chemistry”, 2002, pp. 276-288, vol. 649.
Denk, Michael, et al., “Synthesis and Structure of a Stable Silylene”, “J. Am. Chem. Soc.”, Mar. 23, 1994, pp. 2691-2692, vol. 116, No. 6.
Gibson, George, et al., “The Reaction of Silicon Tetrachloride with N,N-Dimethylhydrazine and Hydrazine”, “Inorg. Chem.”, Aug. 1963, pp. 876-878, vol. 2, No. 4.
Heinicke, Joachim, et al., “Aminosubstituted disilanes: Synthesis by unsymmetrical and symmetrical reductive coupling”, “Heteroatom Chem.”, 1998, pp. 311-316, vol. 9, No. 3.
Huppmann, Frank, et al., “Reaktionen subvalenter Verbindungen des Siliciums mit alkylierten Aromaten”, “Journal of Organometallic Chemistry”, 1994, pp. 217-228, vol. 483 (Only English Abstract Provided).
Kito, Hideyoshi, “Chem Abstract Accession No. 1996:212092; ‘Manufacture of Silicon nitride-based electrically insulating film by plasma CVD’”, “Chemical Abstracts”, 1996 (CAS Abstract Only).
Lee, Gyun-Hwan, et al., “Bis[bis(trimethylsilyl)amino]silylene, an Unstable Divalent Silicon Compound”, “J. Am. Chem. Soc.”, Jul. 9, 2003, pp. 8114-8115, vol. 125, No. 27.
Mitzel, Morbert W., “Simple silylhydrazines as models for Si-N beta-donor interactions in SiNN units”, “Chem. Eur. J.”, 1998, pp. 692-698, vol. 4, No. 4.
Scherer, Otto, et al., “Ethylenimine and imidazolidinone derivatives of silicon”, “Chem. Abstracts”, 1965.
Schuh, et al., “Disilanyl-Amines-Compounds Comprising the Structural Unit Si-Si-N, as Single Source Precursors for Plasma-Enhanced . . . ”, “Z. anorg. allg. Chem.”, 1993, pp. 1347-1352, vol. 619 (Only English Abstract Provided).
Yang, Jinchao, et al., “Disilane-Catalyzed and Thermally Induced Oligomerizations of Alkynes: A Comparison”, “Organometallics”, Mar. 6, 2000, pp. 893-900, vol. 19, No. 5.
Sergeeva, Z.I., et al., “A new method of synthesis of organosilicon hydrazines (Chem. Abstracts Acession No. 1963:27415)”, “Zhurnal Obshchei Khimii”, 1962, pp. 1987-1993, vol. 32 (CAS Abstract Only).
Sergeeva, Z. I., et al., “Reaction of nonsymmetric dialkylhydrazines with alkylchloro-silanes (Caplus Abstract No. 1963:455161)”, “Zhurnal Obshchei Khimii”, 1963, pp. 1874-1878, vol. 33, No. 6 (CAS Abstract Only).
Smirnova, T.P., et al., “Plasma-enhanced chemical vapor deposition of silicon carbonitride films from volatile silyl derivatives of . . . ”, “Proceedings of the 3rd Symposium on Theoretical and Applied Plasma Chemistry, High Energy Chemistry”, 2003, pp. 303-309, vol. 37, No. 5.
Smirnova, T.P., et al., “SiCN alloys obtained by remote plasma chemical vapour deposition from novel precursors”, “Thin Solid Films”, Apr. 1, 2003, pp. 144-151, vol. 429, No. 1-2.
Soldner, Marcus, et al., “1,2-Disilanediyl Bis(triflate), F3CSO3-SiH2SiH2-O3SCF3, as the Key Intermediate for a Facile Preparation of Open-Chaim..”, “Inorg. Chem.”, Apr. 23, 1997, pp. 1758-1763, vol. 36, No. 9.
Witte-Abel, Henning, et al., “Kondensationen von Silylhydrazinen und Estern zu Silylhydrazonen und Pyrazolnen ”, “J. Organometallic Chem.”, Aug. 15, 1999, pp. 341-347, vol. 585, No. 2 (English language Abstract Only).
“Wikipedia Entry for the term ‘Vapor Pressure’”, “accessed online at http://en.wikipedia.org/wiki/Vapor—pressure”, Jul. 17, 2007.
Voronkov, et al., “Izvestiya Vysshikh Uchebnykh Zavedenii”, “Materialy Elektronnoi Tekhniki”, 2002, pp. 57-60, vol. 4 (Only English Abstract Provided).
Wan, Yanjian, et al., “Synthesis of (dialkylamino)disilanes”, “Inorg. Chem.”, Feb. 3, 1993, pp. 341-344, vol. 32, No. 3.
Wannagat, Ulrich, et al., “Chem. Abstracts Accession No. 1959:93473—abstract of ‘Hydrazine-silicon compounds II Mixed alkyl-or aryl-substituted hydrazines’”, “Z. anorg. u allgem. Chem.”, 1959, pp. 341-348, vol. 299 (CAS Abstract Only).
Wannagat, U., et al., “Chem Abstracts Accession Number: 1966:104351; ‘Si-N compounds. L-III. Si-N2H4 compounds. 7. Some new hyrdazinosilanes’”, “Monatshefte fuer Chemie”, 1965, pp. 1902-1908, vol. 96, No. 6. (CAS Abstract Only).
Wannagat, U., et al., “Chem Abstract Accession No. 1966:18737; Silicon-Nitrogen compounds. LXI. Silicaon-hydrazine compounds. 11. Hypergolity of silyhydrazi”, “Monatshefte fuer Chemie”, 1966, pp. 1157-1162, vol. 97, No. 4 (CAS Abstract Only).
West, Robert, et al., “Tetramesityldisilene, a Stable Compound Containing a Silicon-Silicon Double Bond”, “Science”, Dec. 18, 1981, pp. 1343-1344, vol. 214, No. 4527.
West, Robert, et al., “Stable silylenes: Synthesis, structure, reactions”, “Pure & Appl. Chem.”, 1996, pp. 785-788, vol. 68, No. 4.
West, Robert, et al., “Chemical Shift Tensors and NICS Calculations for Stable Silylenes”, “J. Am. Chem. Soc.”, Feb. 25, 1998, pp. 1639-1640, vol. 120, No. 7.
Co-pending U.S. Appl. No. 12/777,519.
Co-pending U.S. Appl. No. 12/862,739.
Baum Thomas H.
Hendrix Bryan C.
Laxman Ravi K.
Roeder Jeffrey F.
Wang Ziyun
Advanced Technology & Materials Inc.
Chappuis Margaret
Hultquist Steven J.
Hultquist IP
Price Elvis O
LandOfFree
Composition and method for low temperature deposition of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composition and method for low temperature deposition of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composition and method for low temperature deposition of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2782050