Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-03-28
2000-02-29
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 99, 117102, 117103, 117946, 117947, C30B 2502
Patent
active
060304545
ABSTRACT:
A method of forming a thin film ferrite material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of the thin film ferrite material on the substrate. The invention also contemplates a device comprising a ferrite layer on a substrate, in which the ferrite layer is formed on the substrate by a process as described above.
REFERENCES:
patent: 5108983 (1992-04-01), Lackey et al.
patent: 5278138 (1994-01-01), Ott et al.
Sukari et al., "Preparation of Ni-Zn Ferrite Thin Films by ICP Flash Evaporation Method", Journal of Ceramic Society of Japan, vol. 101 abs only pp. 1423-1426, Dec. 1993.
Metalorganic Chemical Vapor Deposition of Thick NiFe.sub.2 O.sub.4 Ferrite Films, Y.Q. Li, et al., Abstracts, 1995 Fall Meeting, Materials Research Society, Nov. 27-Dec. 1, 1995, Boston, Massachusetts.
Baum Thomas H.
Roeder Jeffrey F.
Advanced Technology & Materials Inc.
Hultquist Steven J.
Kunemund Robert
Zitzmann Oliver A.M.
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