Composition and method for forming amorphous chalcogenide films

Details Composition and method for forming amorphous chalcogenide films Composition and method for forming amorphous chalcogenide films

1982-05-11

1984-03-27

Smith, John D.

Coating processes

Electrical product produced

Photoelectric

427 87, 427160, 427162, 427240, 501 40, G03C 500

Patent

active

044394640

ABSTRACT:
Amorphous chalcogenide films substantially free from particulate and microstructure are formed on a substrate from solution. The solution contains a glass-forming chalcogenide compound dissolved in a non-aqueous vaporizable solvent, such as a low molecular weight amine, and is substantially free from particulate or crystallizable material. Film formation is effected by coating the solution onto the substrate in a non-vacuumized environment, and thereafter evaporating the solvent from the coating. The procedure is particularly useful in forming amorphous chalcogenide resists for photolithographic applications.

REFERENCES:
patent: 3177082 (1965-04-01), MacAvoy
patent: 3820968 (1974-06-01), Haisty
patent: 4204933 (1980-05-01), Barlow
patent: 4234625 (1980-11-01), Petrov
patent: 4272562 (1981-06-01), Wood
patent: 4371608 (1983-02-01), Das
Maruyama, "New Fabrication Techniques for Chalcogenide Semiconductors", Amorphous Semiconductor Technologies & Devices, pp. 255-262, 1982.

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