Composite unipolar-bipolar semiconductor devices

Details Composite unipolar-bipolar semiconductor devices Composite unipolar-bipolar semiconductor devices

1985-02-07

1990-04-10

Carroll, J.

357 231, 357 30, 357 34, 357 46, 357 41, 357 20, H01L 2702, H01L 2714

Patent

active

049165054

ABSTRACT:
A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect transistor structure is at least partially transparent to radiation of at least part of the electro-magnetic spectrum. In some embodiments radiation sensitive material is deposited upon the gate portion of the sourceless field-effect transistor structure.

REFERENCES:
patent: 2929999 (1960-03-01), Bradley et al.
patent: 3112411 (1963-11-01), Cook, Jr. et al.
patent: 3397326 (1968-08-01), Gallagher et al.
patent: 3401319 (1968-09-01), Watkins
patent: 3466511 (1969-09-01), Lin
patent: 3649843 (1972-03-01), Redwine et al.
patent: 3667115 (1972-06-01), Barson et al.
patent: 3826926 (1974-07-01), White et al.
patent: 3865649 (1975-02-01), Beasom
patent: 3920489 (1975-11-01), Ogura
patent: 3986195 (1976-10-01), Arai
patent: 4016596 (1977-04-01), Magdo et al.
patent: 4027319 (1977-05-01), Borrello et al.
patent: 4044452 (1977-08-01), Abbas et al.
patent: 4057819 (1977-11-01), Owen et al.
patent: 4087833 (1978-05-01), Tseng
patent: 4097888 (1978-06-01), Russell
patent: 4143392 (1979-03-01), Mylroie
patent: 4237472 (1980-12-01), Hollingsworth
patent: 4255671 (1981-03-01), Nonaka et al.
patent: 4344081 (1982-08-01), Pao et al.
patent: 4377817 (1983-03-01), Nishizawara et al.
patent: 4405935 (1983-09-01), Baji et al.

Affiliated with

Also associated with

Rating

Composite unipolar-bipolar semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite unipolar-bipolar semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite unipolar-bipolar semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2302381