Composite target material and process for producing the same

Details Composite target material and process for producing the same Composite target material and process for producing the same

1985-10-15

1986-11-04

Lechert, Jr., Stephen J.

Specialized metallurgical processes, compositions for use therei

Compositions

Consolidated metal powder compositions

419 45, 419 50, 420435, 420 83, 148425, 148301, C22C 1907, C22C 3800, B22F 300

Patent

active

046208720

ABSTRACT:
A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material.
The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together.
The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.

REFERENCES:
patent: 3821035 (1974-06-01), Martin
patent: 4211585 (1980-07-01), Inomata et al.
patent: 4221613 (1980-09-01), Imaizumi et al.
patent: 4541877 (1985-09-01), Stadelmaier
patent: 4563330 (1986-01-01), Narasimhan et al.

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