Composite substrates of conductive and insulating or...

Details Composite substrates of conductive and insulating or... Composite substrates of conductive and insulating or...

2005-04-11

2009-12-01

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C438S167000, C438S172000, C438S779000, C438S783000, C257SE29246, C257SE21407

Reexamination Certificate

active

07626217

ABSTRACT:
Group III-Nitride semiconductor device structures and methods of fabricating Group III-Nitride structures are provided that include an electrically conductive Group III-Nitride substrate, such as a GaN substrate, and a semi-insulating or insulating Group III-Nitride epitaxial layer, such as a GaN epitaxial layer, on the electrically conductive Group III-Nitride substrate. The Group III-Nitride epitaxial layer has a lattice constant that is and a composition that may be substantially the same as a composition and a lattice constant of the Group III-Nitride substrate.

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