Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-08-21
2007-08-21
McNeil, Jennifer (Department: 1775)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S902000
Reexamination Certificate
active
10362278
ABSTRACT:
This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an initial crystalline orientation identical to the orientation of the primary structure, onto at least one support structure (B), the process comprising:a) the formation of at least one orientation mark (Va, Va1, Va2) when the secondary structures are fixed to the primary structure (A), the mark having an arbitrary orientation with respect to the said initial crystalline orientation, but identical for each secondary structure, andb) when a set of secondary structures is transferred onto at least one support structure (B), an arrangement of the secondary structures so that their orientation marks can be oriented in a controlled manner.
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Nanometric Patterning With Ultrthin Twist Bonded Silicon Wafers—Thin solid films (F. Foumel; H. Moriceau,; N, Magnea; J. Eymery.; D. Buttard, ; J. L. Rouviere.
Aspar Bernard
Fournel Franck
Moriceau Hubert
Commissariat A L'Energie Atomique
McNeil Jennifer
Speer Timothy M.
Thelen Reid Brown Raysman & Steiner LLP
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