Composite structure with a growth substrate having a diamond lay

Details Composite structure with a growth substrate having a diamond lay Composite structure with a growth substrate having a diamond lay

1998-05-01

2000-08-29

Niebling, John F.

Semiconductor device manufacturing: process

Having diamond semiconductor component

257 77, H01L 2100

Patent

active

06110759&

ABSTRACT:
A method for producing a composite structure for microelectronic devices includes producing several microelectronic devices by means of a deposition method, pre-seeding a surface with growth seeds for a diamond and depositing the diamond layer from a gas phase. The diamond layer is provided with thin spots between the devices. According to the invention, the devices are laid down initially on a growth substrate directly and/or with the use of the material of the growth substrate. Following the deposition of the devices, the latter are seeded on their free surfaces for the diamond layer. The diamond layer is located on the seeded free surfaces of the devices.

REFERENCES:
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patent: 5082522 (1992-01-01), Purdes et al.
patent: 5087959 (1992-02-01), Omori et al.
patent: 5204210 (1993-04-01), Jansen et al.
patent: 5358596 (1994-10-01), Cappeli et al.
patent: 5994160 (1999-11-01), Niedermann et al.

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