Composite structure of an electronic component

Details Composite structure of an electronic component Composite structure of an electronic component

1996-04-22

2000-04-25

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 77, H01L 2906

Patent

active

060547197

ABSTRACT:
The invention relates to a composite structure for an electronic component with an undoped diamond layer, at least one side of which is covered by a doped non-diamond layer, arranged on a growth substrate. The diamond layer has a thickness of less than 0.5 .mu.m. In addition, the conduction and/or valence bands of the diamond layer and the nondiamond layer exhibit such a band discontinuity that charge carries from the doped non-diamond layer which are excited optically and/or thermally, for example, can be drawn, with a reduction of their potential energy, into the valence and/or conduction band of the undoped diamond layer. This configuration causes a potential well to exist in the area of the diamond layer, at least in one direction, with a quantizing effect for the charge carriers drawn into the diamond layer.

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Tessmer et al High Temperature Operation of Polycrystalline Diamond Field Effect Transistors IEEE ED 14, 66(Feb. 1993).

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