Composite structure for an electronic component comprising a gro

Details Composite structure for an electronic component comprising a gro Composite structure for an electronic component comprising a gro

1996-01-30

1998-04-28

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257190, H01L 310312, H01L 310328, H01L 310336, H01L 31072

Patent

active

057448256

ABSTRACT:
The invention relates to a composite structure for electronic components comprising a growth substrate, an intermediate layer having substantially a crystallographic lattice structure arranged on the growth substrate, and a diamond layer applied on top of the intermediate layer, and to a process for producing a composite structure of this type. In order to obtain a diamond layer of highest quality, the intermediate layer has substantially a zinc blende or diamond or a calcium fluoride structure, in which at the outset of the intermediate layer the difference between the lattice constant of the intermediate layer and the lattice constant of the growth substrate, relative to the lattice constant of the growth substrate, is less than 20%, in particular less than 10%, and in which at the transition from the intermediate layer to the diamond layer for the lattice constant of the intermediate layer and the lattice constant of the diamond layer the value of the expression .vertline.(n*a.sub.ZS -m*a.sub.D).vertline.
*a.sub.ZS is less than 0.2, in particular less than 0.1, wherein n and m are natural numbers, a.sub.D is the lattice constant of the diamond layer, and a.sub.ZS is the lattice constant of the intermediate layer at the transition to the diamond layer.

REFERENCES:
patent: 3821033 (1974-06-01), Hu
patent: 4177321 (1979-12-01), Nishizawa
patent: 4863529 (1989-09-01), Imai et al.
patent: 5236545 (1993-08-01), Pryor
Abstract of Published Japanese Patent Application No. JP 61-107721. no date.
von Munch et al. "Production of .beta.-SiC buffer layers for CVD diamond thin films by ion implantation", Dia. & Rel. Mat., vol. 3, pp. 500-505, 1994.

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