Composite structure comprising a semiconductor layer arranged on

Details Composite structure comprising a semiconductor layer arranged on Composite structure comprising a semiconductor layer arranged on

1995-08-07

1998-12-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117 96, 117104, 117929, 423446, 427557, C30B 2904

Patent

active

058432248

ABSTRACT:
The invention relates to a composite structure including a semiconductor layer arranged on a diamond layer and/or a diamond-like layer, for subsequent processing to produce electronic components and/or groups of components and to a process for producing such a composite structure. In order to improve the quality of the subsequent components, the diamond layer is deposited underneath the component source zones from which the components are subsequently produced, and the diamond or diamond-like layer is provided at the margins of the component source zones and/or outside of the component source zones with edges where the thickness of the layer changes abruptly such that the edges have an edge height amounting to at least 1O%, preferably at least 50%, of the layer thickness of the diamond layer. Imperfections such as dislocations or other discontinuities in the semiconductor layer tend to collect at these edges outside of the component source zones, thereby decreasing the density of discontinuities in the component source zones and improving the quality of electronic components produced of material from the component source zones.

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