Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-04-22
1999-01-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 95, 117 97, 117913, 117929, 423446, C30B 2902
Patent
active
058610588
ABSTRACT:
A composite structure for electronic components, having a base substrate with a flat side provided with a depression, and having a cover layer which is disposed on the flat side structured by the depression, and the depression being covered to form a hollow structure. The depression in the base substrate is created prior to the deposition of the cover layer and has a clear width measured parallel to the flat side that is less than one-half of its clear depth measured before the cover layer is applied. The vapor phase deposited cover layer is formed from a material which has a sufficiently high surface tension to promote three-dimensional growth of the vapor phase deposited layer.
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Ferguson Mona
Fuesser Hans-Juergen
Greeb Karl-Heinrich
Gutheit Tim
Muench Wolfram
Daimler-Benz Aktiengesellschaft
Kunemund Robert
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