Composite series resistor having reduced temperature...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257S537000, C257S538000

Reexamination Certificate

active

07078786

ABSTRACT:
According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. According to this exemplary embodiment, the integrated circuit chip further comprises a metal resistor having a first terminal and a second terminal, where the metal resistor is situated over the poly resistor, and where the first terminal of the metal resistor is connected to the first terminal of the poly resistor. According to this exemplary embodiment, the integrated circuit chip may further comprise a first metal segment connected to the second terminal of the metal resistor and a second metal segment connected to the second terminal of the poly resistor. The integrated circuit chip may further comprise an inter-layer dielectric situated between the poly resistor and the metal resistor.

REFERENCES:
patent: 5883417 (1999-03-01), Jao et al.
patent: 6291873 (2001-09-01), Hidaka
patent: 6504220 (2003-01-01), Sato
patent: 6849921 (2005-02-01), Uenishi
patent: 2004/0004535 (2004-01-01), Banerjee

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