Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-07-18
2006-07-18
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S537000, C257S538000
Reexamination Certificate
active
07078786
ABSTRACT:
According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. According to this exemplary embodiment, the integrated circuit chip further comprises a metal resistor having a first terminal and a second terminal, where the metal resistor is situated over the poly resistor, and where the first terminal of the metal resistor is connected to the first terminal of the poly resistor. According to this exemplary embodiment, the integrated circuit chip may further comprise a first metal segment connected to the second terminal of the metal resistor and a second metal segment connected to the second terminal of the poly resistor. The integrated circuit chip may further comprise an inter-layer dielectric situated between the poly resistor and the metal resistor.
REFERENCES:
patent: 5883417 (1999-03-01), Jao et al.
patent: 6291873 (2001-09-01), Hidaka
patent: 6504220 (2003-01-01), Sato
patent: 6849921 (2005-02-01), Uenishi
patent: 2004/0004535 (2004-01-01), Banerjee
Hu Chun
Racanelli Marco
Shen Chih-Chieh
Fahmy Wael
Farjami & Farjami LLP
Newport Fab, LLC dba Jazz Semiconductor
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