Composite semiconductor substrate and a fabrication process ther

Details Composite semiconductor substrate and a fabrication process ther Composite semiconductor substrate and a fabrication process ther

1993-02-19

1995-05-09

Hearn, Brian

Fishing, trapping, and vermin destroying

437 21, 437 62, 437 84, 437974, 148DIG135, H01L 21302

Patent

active

054139511

ABSTRACT:
A method for fabricating an SOI structure which includes the steps of contacting a single crystal layer of a group III-V compound semiconductor material to a single crystal substrate of sapphire such that a principal surface of said single crystal layer establishes an intimate contact with a corresponding principal surface of said single crystal substrate and bonding the single crystal layer and the single crystal substrate with each other while elevating a temperature.

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