Composite semiconductor structures

Details Composite semiconductor structures Composite semiconductor structures

1975-06-23

1977-12-27

Larkins, William D.

Electrical resistors

Resistance value temperature-compensated

With additional compensating resistor or resistance element

338 7, 357 20, 357 51, 357 55, 357 56, 357 60, 357 76, H01C 706, H01L 2702, H01L 2906

Patent

active

040657426

ABSTRACT:
Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.

REFERENCES:
patent: 2841508 (1958-07-01), Roup et al.
patent: 3015762 (1962-01-01), Shockley
patent: 3171068 (1965-02-01), Denkewalter et al.
patent: 3453498 (1969-07-01), Hubner
patent: 3579057 (1971-05-01), Stoller
patent: 3617825 (1971-11-01), Chilton et al.
patent: 3697831 (1972-10-01), Anderson et al.
patent: 3711753 (1973-01-01), Brand et al.
patent: 3860948 (1975-01-01), Ono et al.

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