Composite semiconductor integrated circuit device

Details Composite semiconductor integrated circuit device Composite semiconductor integrated circuit device

1991-09-13

1994-06-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

257208, 257758, H01L 2710, H01L 27118

Patent

active

053212800

ABSTRACT:
A composite semiconductor integrated circuit device includes logic circuit blocks of a master slice system and function blocks such as memories all of which are integrated on a single semiconductor chip. The function blocks are constituted with n lower metal wiring layers. On a portion of a surface of the chip which overlaps with the function block, a (n+1)th metal layer is not provided as signal wiring, but a (n+2)th metal wiring layer or higher layers are provided. The step coverage of the metal wiring layers provided on the chip surface portion overlapping with the function block is improved and cross-talk between signal lines can be reduced.

REFERENCES:
patent: 4780846 (1985-10-01), Tanabe et al.
patent: 5008728 (1991-04-01), Yamamura et al.
patent: 5060045 (1991-10-01), Owada et al.
patent: 5119158 (1992-06-01), Hatano
T. Takahashi et al. "A 1.4 M-Transistor CMOS Gate Array with 4 ns RAM", ISSCC Digest of Tech. Papers, pp. 178-179 and 332 (1989).
Nikkei Microdevices, Jun. 1989, pp. 86-101.

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