Composite semiconductor device having function for overcurrent d

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

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361 93, 361 87, 307309, 324252, H01L 2722, H02H 300, H02H 318, H03K 1790

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active

050236849

ABSTRACT:
An insulating substrate has a U-shaped conductive layer which produces a magnetic field when a current flows therethrough as indicated by arrows. The substrate also includes a conductive layer on which a power semiconductor element is mounted through its main electrode. A current detector such as Hall effect elements is located inside the U-shaped conductive layer. When a load current flows through the semiconductor element, it flows through the conductive layer to produce the magnetic field since the other main electrode of the semiconductor element is electrically connected to one end of the conductive member through a metal wire. Accordingly, the load current flowing through the semiconductor element will be effectively detected by the current detector without connecting a resistor or current transformer to external terminals of a power semiconductor device, thereby providing a composite semiconductor device with a compact structure used for inverters for driving three-phase motors, etc.

REFERENCES:
patent: 4829352 (1989-05-01), Popovic et al.
patent: 4939448 (1990-07-01), Gudel
patent: 4945445 (1990-07-01), Schmerda et al.
Hollis, J. E., "Micro-Electronic Magnetic Transducers", Measurement and Control, vol. 6, Jan. 1973, pp. 38-40.

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