Composite semiconductor device and method of manufacturing...

Details Composite semiconductor device and method of manufacturing... Composite semiconductor device and method of manufacturing...

2011-02-01

2011-02-01

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S079000, C257S080000, C257S081000, C257S082000, C257S083000, C257S089000, C257S095000, C257S098000, C257S099000, C257S100000

Reexamination Certificate

active

07880180

ABSTRACT:
The disclosed subject matter provides a composite semiconductor device which can include a common substrate, a first semiconductor light emitting structure, and a second semiconductor light emitting structure. The first semiconductor light emitting structure can include an epitaxial grown layer containing a light emitting layer formed on part of the common substrate either directly or via a bonding layer. The second semiconductor light emitting structure can be provided in a notch at at least one location to which the epitaxial grown layer is not bonded, or in a recess formed in the notch at one location. The disclosed subject matter also provides a method of manufacturing a composite semiconductor device having the above-described and other structures.

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