Composite semiconductor device

Details Composite semiconductor device Composite semiconductor device

2008-03-28

2009-12-08

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S288000, C257S350000, C257SE21364, C257SE21421, C257SE21411, C257SE21499, C257SE21511

Reexamination Certificate

active

07629668

ABSTRACT:
The electrode of a thin-type capacitor is connected to the rear surface of a p-type semiconductor substrate which is brought to a ground potential, by a conductive DAF (Die Attach Film) or by a conductive adhesive, and the electrodes of the front surface of the p-type semiconductor substrate are respectively connected with and stacked on the terminals of a thin-type inductor by bumps, whereby manufacturing costs can be reduced while the occurrence of noise can be suppressed and packaging area can be made small.

REFERENCES:
patent: 6678144 (2004-01-01), Higashi et al.
patent: 6855573 (2005-02-01), Li et al.
patent: 6979907 (2005-12-01), Li et al.
patent: 7005747 (2006-02-01), Koizumi
patent: 7079371 (2006-07-01), Yamasaki
patent: 7443654 (2008-10-01), Asami et al.
patent: 2002-057037 (2002-02-01), None
patent: 2004-072815 (2004-03-01), None

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