1988-12-13
1990-06-19
Edlow, Martin H.
357 42, 357 231, 357 2314, 357 234, 357 46, H01L 2702
Patent
active
049357999
ABSTRACT:
Disclosed is a composite semiconductor device which comprises: a second and a third semiconductor regions of a second conductivity type formed in a first semiconductor region of a first conductivity type independently of each other and so as to be exposed on one main surface of a semiconductor substrate; a fourth and a fifth semiconductor regions of the first conductivity type formed in the second semiconductor region independently of each other and so as to be exposed on the one main surface of the semiconductor substrate; a first insulated gate electrode formed on the second semiconductor region located between the fifth and first semiconductor regions and exposed on the one main surface; a second insulated gate electrode formed on the first semiconductor region located between the second and third semiconductor regions and exposed on the one main surface; an electrode which shorts the fourth and third semiconductor regions; another electrode which shorts the second and fifth semiconductor regions; and a further electrode provided in the first semiconductor region.
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patent: 4630084 (1986-12-01), Tihanyi
patent: 4698655 (1987-10-01), Schultz
patent: 4729007 (1988-03-01), Coe
Mori Mutsuhiro
Tanaka Tomoyuki
Yasuda Yasumichi
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