Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1988-10-26
1990-07-31
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307305, 307631, 307633, 307638, 307639, H03K 1760, H03K 335/17/72
Patent
active
049452665
ABSTRACT:
A static induction thyristor and a power MOSFET are connected is series to construct a composite semiconductor device. The composite semiconductor device is turned ON/OFF in response to signals applied to gates of the static induction thyristor and power MOSFET. Power consumption can be decreased because of the low ON state resistance of the static induction thyristor. Further, a driving current can be decreased since both the static induction thyristor and the power MOSFET are voltage driving type elements, to further decrease the power consumption. Still further, a composite semiconductor device having a high breakdown voltage can be easily implemented by increading the channel width of the static induction thyristor.
REFERENCES:
patent: 4663547 (1987-05-01), Baliga et al.
patent: 4717849 (1988-01-01), Shigekane
patent: 4768075 (1988-08-01), Broich et al.
"Bipolar-FET Combinational Power Transistors for Power Conversion Applications", Dan Y. Chen and Shaoan A. Chin, CH1855-6/1983, IEEE, pp. 514-519.
"A New 100A, 1000 V Dual Cascode BIMOS Power Module for High Power and High Frequency Inverter Application", Y. Kamitani, G. Majumdar, H. Yamaguchi and S. Mori, PCI, Oct. 1986, Proceedings pp. 143-154.
Elektronik 8/22, Apr. 1983, pp. 55-56.
Siemens Components 25 (1987), Heft 6, pp. 221-224.
Miller Stanley D.
Mitsubishi Denki & Kabushiki Kaisha
Wambach Margaret R.
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