Composite resonator-type semiconductor laser device

Details Composite resonator-type semiconductor laser device Composite resonator-type semiconductor laser device

1986-02-18

1988-11-29

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, H01S 319

Patent

active

047886897

ABSTRACT:
At least a portion of the optical waveguide is formed in a superlattice structure or in a quantum well structure, and crystals are mixed in the portions of the superlattice structure or the quantum well structure that divide the resonator to decrease the refractive index of these portions, in order to form two or more laser portions having different cavity lengths. The semiconductor device can be formed easily and precisely without employing cleavage which involves cumbersome manufacturing steps. Further, the crystal need not be grown on the groove but may simply be grown on a flat surface, making it possible to easily and precisely produce the semiconductor laser device.

REFERENCES:
"Disorder Of An AlAs-GaAs Superlattice By Impurity Diffusion", Laidig et al., Applied Physics Letter 38(10), 1981, pp. 776-778.
"GaAlAs Buried Multiquantum Well Lasers Fabricated By Diffusion-induced Disordering", Fukuzawa et al., Applied Physics Letter 45(1), 1984 , pp. 1-3.
"Embedded-mirror Semiconductor Laser", Laidig et al., Applied Physics Letter 45(5), 1984, pp. 485-487.

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