Composite quantum well infrared detector

Details Composite quantum well infrared detector Composite quantum well infrared detector

1991-08-26

1993-08-24

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 17, 257184, H01L 29205, H01L 3104

Patent

active

052391868

ABSTRACT:
This invention discloses a multiple quantum well infrared detector comprising a series of alternating layers of blocking layers and composite well layers. Each composite well layer is comprised of alternating layers of GaAs and AlGaAs forming a tightly coupled well group. The tightly coupled well group allows more allowed states for an electron released from the valence bands of the gallium arsenide semiconductor material. Consequently, there is a wider band width of detectable infrared radiation by the composite wall structure over the single well of the prior art.

REFERENCES:
patent: 4894526 (1990-01-01), Bethea et al.
patent: 4914488 (1990-04-01), Yamave et al.
patent: 5093695 (1992-03-01), Cunningham

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