Composite power transistor structures using semiconductor materi

Details Composite power transistor structures using semiconductor materi Composite power transistor structures using semiconductor materi

1995-06-07

1997-06-10

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257197, 257329, 257335, 257378, 257566, 257616, H01L 310328, H01L 2976

Patent

active

056378890

ABSTRACT:
A power device structure which is formed of two merged device structures: an FET control device is located in a surface layer of narrower-bandgap material, and a blocking device which provides high-voltage-withstand capability is located deeper in the device, in a substrate of wider-bandgap material.

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