Composite plate comprising carbon nanotube bundles with high...

Stock material or miscellaneous articles – Composite – Of silicon containing

Reexamination Certificate

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C428S446000, C428S408000, C977S742000, C977S781000

Reexamination Certificate

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07867620

ABSTRACT:
A composite plate comprising CNT bundles with high thermal conductivity is formed by the method comprising preparing a CNT growth substrate, depositing a CNT growth catalyst on the CNT growth substrate, preparing a wafer with etched through via arrays, placing the wafer with the etched through via arrays over the CNT growth substrate with the CNT growth catalyst, growing CNT bundles in the etched through via arrays on the wafer over the CNT growth substrate with the CNT growth catalyst in a CVD chamber to form a wafer matrix CNT composite structure; and removing the CNT growth substrate from the wafer matrix CNT composite structure. The formed composite plate comprising CNT bundles with high thermal conductivity has improved CTE silicon match, has a more effective thermal conductivity than a silicon matrix or Cu or Cu alloy substrate, and contains nanotubes that remain vertical.

REFERENCES:
patent: 7453154 (2008-11-01), Teo et al.
patent: 2003/0002620 (2003-01-01), Mazor et al.
patent: 2003/0203139 (2003-10-01), Ren et al.
patent: 2003/0211724 (2003-11-01), Haase
patent: 2004/0265489 (2004-12-01), Dubin
patent: 2005/0276743 (2005-12-01), Lacombe et al.
patent: 2006/0141339 (2006-06-01), Roy et al.

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