Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2008-07-01
2008-07-01
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C977S824000, C313S467000, C558S312000, C252S30160R
Reexamination Certificate
active
10521233
ABSTRACT:
There is provided composite nano-particles comprising nano-crystal particles dispersed stably and individually in suspension in high concentration without mutual aggregation of the nano-particles. A determined amount of pure water or deionized water is poured into a reactor, into which is introduced nitrogen gas at rate of 300 cm3/min for a given time while agitating with a stirrer to remove dissolved oxygen in the pure water, allowing to stand in an atmosphere of nitrogen. Next, the inside of the reactor is maintained in an atmosphere of nitrogen and sodium citrate as a dispersion-stabilizing agent, an aqueous solution of MPS as a surface-modifying agent, an anion aqueous solution for co-precipitation as a nano-crystal and a cation aqueous solution are added, in that order. Then, an aqueous solution of sodium silicate is added to the reactor, which is then allowed to stand in the dark place in an atmosphere of nitrogen after agitation. At that time, a vitrification-inhibiting agent may be added in order to inhibit the growth of glass layer.
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International Search Report corresponding to PCT/JP03/09032, under dae of mailing of Sep. 30, 2003.
Hattori Yasushi
Isobe Tetsuhiko
Itoh Shigeo
Takahashi Hisamitsu
Coleman W. David
Keio University Faculty of Science and Technology
Quarles & Brady LLP
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