Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-03-05
2000-10-03
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, H01L 2348, H01L 2352, H01L 2940
Patent
active
061277304
ABSTRACT:
A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.
REFERENCES:
patent: 4674176 (1987-06-01), Tuckerman
patent: 4795722 (1989-01-01), Welch et al.
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 5183782 (1993-02-01), Onishi et al.
Mehta, et al.; "Blanket CVD Tungsten Interconnect for VLSI Devices", Proceedings Third International IEEE VLSI Multilevel Interconnection Conference, pp. 418-435, Jun. 9-10, 1986.
Rosler, et al.; "Tungsten chemical vapor deposition characteristics using SiH4 in a single wafer system", J. Vac. Sci. Technol., pp. 1721-1727, B 6(6), Nov./Dec. 1988.
Brady W. James
Clark S. V.
Donaldson Richard L.
Hoel Carlton H.
Saadat Mahshid
LandOfFree
Composite metal films for severe topology interconnects does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Composite metal films for severe topology interconnects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite metal films for severe topology interconnects will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-198523