Composite metal and polysilicon field plate structure for high v

Details Composite metal and polysilicon field plate structure for high v Composite metal and polysilicon field plate structure for high v

1980-11-17

1983-08-16

Clawson, Jr., Joseph E.

357 54, 357 59, 357 73, 357 23, H01L 2940

Patent

active

043994490

ABSTRACT:
A field plate structure is provided to terminate the electrode of a semiconductor device in a manner to reduce curvature of electric field within the body of the semiconductor device underlying the electrode and surrounding the electrode. A stepped electrode outer rim is provided in effect through the use of an underlying polysilicon which drapes over an underlying oxide. The main contact metal, typically aluminum, overlies the polysilicon but is upwardly displaced above the relatively thin polysilicon by a relatively thick oxide layer over the polysilicon. The composite effect of the thin polysilicon layer at one level and the heavier metallizing at a higher level but overlapping the polysilicon is that of a metal electrode deposited atop an insulation layer having two steps therein.

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