Composite material including copper and cuprous oxide and...

Details Composite material including copper and cuprous oxide and... Composite material including copper and cuprous oxide and...

2005-06-21

2005-06-21

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S712000, C257S762000

Reexamination Certificate

active

06909185

ABSTRACT:
A composite material is provided, which has a low thermal expansivity, a high thermal conductivity, and a good plastic workability, which composite material may be applied to semiconductor devices and many other uses. The composite material is composed of metal and inorganic particles having a smaller coefficient of thermal expansion than the metal. It is characterized in that the inorganic particles are dispersed in such a way that 95% or more of them (in terms of their area in cross-section) form aggregates of complex configuration joined together. The composite material contains 20-80 vol % of copper oxide, with the remainder being copper. It has a coefficient of thermal expansion of 5×10−6to 14×10−6/° C. and thermal conductivity of 30-325 W/m·K in the range of room temperature to 300° C. It is suitable for the radiator plate of semiconductor devices and the dielectric plate of electrostatic attractors.

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