Composite material for heat sinks for semiconductor devices and

Details Composite material for heat sinks for semiconductor devices and Composite material for heat sinks for semiconductor devices and

1998-02-12

2000-08-29

Copenheaver, Blaine

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Composite having voids in a component

4283126, 4283128, 4283139, B32B 326

Patent

active

061105775

ABSTRACT:
A high-pressure vessel is allowed to be in an initial state, and a first chamber is disposed downward. Copper or copper alloy is placed in the first chamber, and SiC is set in a second chamber. The high-pressure vessel is tightly sealed, and then the inside of the high-pressure vessel is subjected to vacuum suction through a suction pipe. An electric power is applied to a heater to heat and melt the copper or copper alloy in the first chamber. At a stage at which the molten copper in the first chamber arrives at a predetermined temperature, the high-pressure vessel is inverted by 180 degrees to give a state in which SiC is immersed in the molten copper. An impregnating gas is introduced into the high-pressure vessel through a gas inlet pipe to apply a pressure to the inside of the high-pressure vessel. Thus, SiC is impregnated with the molten copper. The high-pressure vessel is inverted by 180 degrees, and then the impregnating gas in the high-pressure vessel is discharged through a gas outlet pipe, simultaneously with which a cooling gas is introduced into the high-pressure vessel through the gas inlet pipe to cool the high-pressure vessel.

REFERENCES:
patent: 3837848 (1974-09-01), Wessel
patent: 5322109 (1994-06-01), Cornie
patent: 5437921 (1995-08-01), Kogo et al.
patent: 5526867 (1996-06-01), Keck et al.
patent: 5553658 (1996-09-01), Cornie
patent: 5570502 (1996-11-01), Sawtell et al.
patent: 5689796 (1997-11-01), Kasai et al.
patent: 5905938 (1999-05-01), Akiyoshi

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