Composite JFET-bipolar transistor structure

Details Composite JFET-bipolar transistor structure Composite JFET-bipolar transistor structure

1976-12-27

1978-06-13

Larkins, William D.

357 20, 357 22, 357 34, 357 46, 357 48, H01L 2702, H01L 2980, H01L 2972, H01L 2906

Patent

active

040952525

ABSTRACT:
A JFET is coupled in parallel with a bipolar transistor to produce a composite structure that has improved signal transfer characteristics in certain circuit applications. While useful with discrete devices, the combination is readily achieved in integrated circuit form.

REFERENCES:
patent: 3408544 (1968-10-01), Teszner
Lewis et al. "Single Device Cell Using Vertical Junction FET" IBM Technical Disclosure Bulletin vol. 15, (2/73), p. 28.

Affiliated with

Also associated with

Rating

Composite JFET-bipolar transistor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite JFET-bipolar transistor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite JFET-bipolar transistor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12842