Composite integrated semiconductor device

Details Composite integrated semiconductor device Composite integrated semiconductor device

2008-04-01

2008-04-01

Jackson, Stephen W. (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

Reexamination Certificate

active

07352548

ABSTRACT:
A composite integrated semiconductor device. In one embodiment, an input surge
oise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge
oise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

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Office Communication from the Japanese Patent Office (dated Dec. 26, 2006).

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