Composite insulation with a dielectric constant of less than 3 i

Details Composite insulation with a dielectric constant of less than 3 i Composite insulation with a dielectric constant of less than 3 i

1995-06-07

1997-11-25

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257752, 257642, 257643, H01L 23485, H01L 2352

Patent

active

056915730

ABSTRACT:
A method of forming low dielectric insulation between those pairs of conductive lines, of a level of interconnection for integrated circuits, having a gap of about 0.5 microns or less by depositing a nonconformal source with a poor step function for the insulating material, such as silane (SiH.sub.4) as the silicon (Si) source for silicon dioxide (SiO.sub.2), so as to create, in the gap, a large void whose dielectric constant is slightly greater than 1. After all of the conductive lines have received a deposit of conformal insulating material and a flowable insulating material, the composite insulating materials are removed, preferably by etching, from those pairs of conductive lines with a gap of about 0.5 microns or less. Now, a nonconformal insulating material with a poor step function is deposited and creates a large void in the open gaps of 0.5 microns or less. After creating the void, the deposition continues and is planarized at the desired composite thickness of insulation. Alternatively, a thin conformal insulating layer is first deposited as a liner on the conductive lines. The resulting structure of the interconnection level comprises a layer of insulation between and on the conductive lines with the dielectric constant of the insulation between the pairs of conductive lines with the gap of 0.5 or less being, in combination with the void, at least about 3 or lower, and all of the remaining gaps are filled with the flowable insulating material and are void free with a composite dielectric constant of greater than about 3.5.

REFERENCES:
patent: 5004704 (1991-04-01), Maeda et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5275977 (1994-01-01), Otsubo et al.
patent: 5278103 (1994-01-01), Mallon et al.
patent: 5432128 (1995-07-01), Tsu
patent: 5451804 (1995-09-01), Lur et al.
patent: 5530293 (1996-06-01), Cohen et al.
patent: 5566045 (1996-10-01), Summerfelt et al.

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