Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-12-26
2006-12-26
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S659000, C257S904000, C257S347000, C438S381000
Reexamination Certificate
active
07154161
ABSTRACT:
According to one exemplary embodiment, a structure situated in a semiconductor die comprises an active shield situated in a substrate, where the active shield comprises a salicide layer situated on an active region, and where the active shield has a first conductivity type. The active shield can be situated in a well in the substrate, where the well is connected to a voltage source greater than or equal to a ground voltage, and where the well has a second conductivity type. According to this exemplary embodiment, the structure further comprises a passive component situated in an interconnect metal layer in the semiconductor die, where the passive component is situated above the active shield, and where the active shield defines an AC ground for the passive component. The structure further comprises at least one contact, where the at least one contact connects the active shield to a semiconductor die AC ground.
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C. Patrick Yue and S. Simon Wong, “On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF-IC's” IEEE Journal of Solid-State Circuits, vol. 33, No. 5, May 1998, pp. 743-751.
Kihong Kim and Kenneth O., “Characteristics of an Integrated Spiral Inductor with an Underlying n-Well” IEEE Transactions on Electron Devices, vol. 44, No. 9, Sep. 1997, pp. 1565-1567.
Blaschke Volker A.
Racanelli Marco
Chiu Tsz
Farjami & Farjami LLP
Newport Fab LLC
Smith Zandra V.
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