Composite film, semiconductor device employing the same and meth

Details Composite film, semiconductor device employing the same and meth Composite film, semiconductor device employing the same and meth

1985-05-29

1986-11-04

James, Andrew J.

357 71, 357 80, H01L 2340, H01L 2312, H01L 2314

Patent

active

046212787

ABSTRACT:
A composite film comprises two copper films (11, 12) adhered to and insulated from each other by a thermal setting resin (13) to be shaped in a belt shape. A lead frame is formed by etching one copper film of the composite film such that a plurality of lead patterns (15) are in succession defined including a plurality of leads (16) arranged approximately equispaced to extend in the length direction and the other copper film of the composite film is etched to form supporting patterns (19) corresponding to the respective lead patterns and for supporting the corresponding ones. A semiconductor element (20) is provided in association with the respective lead patterns and the semiconductor element is connected to the respective leads of the corresponding lead patterns by wire bonding, while the respective leads are connected to external terminals (22). The semiconductor element, the lead patterns and a portion of the external terminals are molded with a resin material so that a mold layer (23) is formed and then the composite film is severed for each of the mold layers, whereby a semiconductor device is provided.

REFERENCES:
patent: 3763404 (1973-10-01), Aird
patent: 3768986 (1973-10-01), Ramos et al.
patent: 3838984 (1974-01-01), Crane et al.
patent: 4132856 (1979-01-01), Hutchison et al.
patent: 4191800 (1980-03-01), Holtzman
patent: 4353954 (1982-10-01), Yomouka et al.

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