Composite field effect transistor

Details Composite field effect transistor Composite field effect transistor

2008-03-25

2008-03-25

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S421000

Reexamination Certificate

active

11378412

ABSTRACT:
A composite field effect transistor, in accordance with one embodiment, includes a zener diode, a junction field effect transistor and a metal-oxide-semiconductor field effect transistor. A gate of the junction field effect transistor is coupled to an anode of the zener diode. A cathode of the zener diode is coupled to a gate of the metal-oxide-semiconductor field effect transistor. A drain of the metal-oxide-semiconductor field effect transistor is coupled to a source of the junction field effect transistor.

REFERENCES:
patent: 4323799 (1982-04-01), King et al.
patent: 4492883 (1985-01-01), Janutka
patent: 4853563 (1989-08-01), Hill et al.
patent: 5514996 (1996-05-01), Aizawa

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