Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Patent
1997-07-22
1999-10-26
Everhart, Caridad
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
438610, 438613, 438614, 438 17, 257 48, 257746, 257739, 257737, H01L 2348
Patent
active
059734051
ABSTRACT:
An improved wear resistant bump contact is produced by the inclusion of small particles of hard materials in the conductive material of the contact bump, preferably by co-deposition at the time of electroplating of the bump bulk material. Desirable attributes of the small particles of hard material include small particle size, hardness greater than the hardness of the bulk material of the contact bump, compatibility with the plating conditions, and electrical conductivity. Nitride, borides, suicides, carbides are typical interstitial compounds suitable for use in satisfying these desirable attributes. In one preferred example, a nickel bulk material and silicon carbide particles are utilized. In one variation, the bump of metal-particle co-deposited material is coated by a thin cap layer of noble, non-oxidizing metal to prevent electrical erosion by arcing as contact is made and broken from the pad. Rhodium and ruthenium are suitable metals and can be electrodeposited over the composite bump structure.
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Keukelaar Ronald
Nanis Leonard
Dytak Corporation
Everhart Caridad
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