Composite dielectric passivation of high density circuits

Details Composite dielectric passivation of high density circuits Composite dielectric passivation of high density circuits

1995-06-07

1997-07-22

Dang, Trung

Fishing, trapping, and vermin destroying

437238, 437241, H01L 2102

Patent

active

056503598

ABSTRACT:
A composite dieletric film for final passivation of an integrated circuit. First, plasma-enhanced TEOS oxide is deposited to a thickness of 2000 .ANG., followed by thermal O.sub.3 -TEOS oxide to a thickness of 8000 .ANG., and then silicon nitride to a thickness of 10,000 .ANG..

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