Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-04-05
2005-04-05
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S210000, C257S211000, C257S759000, C257S760000
Reexamination Certificate
active
06876081
ABSTRACT:
An apparatus including a contact point formed on a device layer of a circuit substrate or interconnect layer on a substrate; a first dielectric layer including cubic boron nitride on the substrate; and a different second dielectric layer on the substrate and separated from the device layer by the first dielectric layer. Also, an apparatus including a circuit substrate including a device layer and a composite dielectric layer. The composite dielectric includes a first dielectric material including cubic boron nitride and a different second dielectric material. The first dielectric material surrounds the second dielectric material.
REFERENCES:
patent: 5081053 (1992-01-01), Heremans et al.
patent: 6726996 (2004-04-01), Barth et al.
patent: 20020000556 (2002-01-01), Sakamoto et al.
patent: 20020003238 (2002-01-01), Ramdani et al.
Blakely , Sokoloff, Taylor & Zafman LLP
Huynh Andy
Intel Corporation
Nelms David
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