Composite dielectric for a semiconductor device and method of fa

Details Composite dielectric for a semiconductor device and method of fa Composite dielectric for a semiconductor device and method of fa

1992-08-18

1993-11-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437241, 437242, 437941, 437983, 148DIG112, H01L 2102

Patent

active

052583333

ABSTRACT:
A high-quality, highly reliable, composite dielectric layer for a semiconductor device. The composite dielectric layer is formed by nitriding a silicon surface, forming an oxide layer on the nitrided silicon surface, and then annealing the nitrided-silicon surface and the oxide in an oxygen ambient.

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Jacobs et al., "n-Channel Si-Gate Process for MNOS EEPROM Transistors"; Solid State Electronics, vol. 24, pp. 517-522, 1981.
Shih et al., "Short-Channel MOSFET's with Superior . . . Multiple Rapid Thermal Processing", IEEE Trans. on Elect. Devices, vol. 35(12), 1988, p. 2438.

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