Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-04-17
2007-04-17
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S701000, C257S705000, C257S668000, C257S671000, C257S688000, C257S760000, C257S758000, C257S779000, C336S200000, C336S232000, C428S212000
Reexamination Certificate
active
10073117
ABSTRACT:
In a composite device of the laminate type having a laminate structure of a composite ceramic layer and a dielectric ceramic layer, the composite ceramic layer including a layer portion having the same composition as the dielectric ceramic layer and a plurality of particle portions formed on the surface of the layer portion. The particle portions are made from magnetic ceramic material. This prevents the ceramic layers of the device from cracking and separating when fired.
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Japanese Patent Office Communication with partial translation for corresponding Japanese Patent Application No. 2001-040394 dated Jan. 18, 2005.
Hirano Hitoshi
Umemoto Takashi
Yoshikawa Hideki
Armstrong Kratz Quintos Hanson & Brooks, LLP
Im Junghwa
Owens Douglas W.
Sanyo Electric Co,. Ltd.
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