Composite conductive structures in integrated circuits and metho

Metal treatment – Compositions – Heat treating

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427 88, 427 91, 427 93, 357 67, 357 71, H01L 21283

Patent

active

042630584

ABSTRACT:
A composite conductive structure in integrated circuit devices is described. The composite conductive structure includes an insulating substrate on which is provided a conductor of a refractory metal substantially nonreactive with silicon dioxide. A layer of a silicide of the refractory metal covers the conductor and a layer of silicon dioxide covers the layer of the silicide. A method of making such structures is also described.

REFERENCES:
patent: 3375418 (1968-03-01), Garnache
patent: 4109372 (1978-08-01), Geffken
patent: 4128670 (1978-12-01), Gaesslen

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