Composite conductive structures and method of making same

Details Composite conductive structures and method of making same Composite conductive structures and method of making same

1982-03-29

1984-01-31

Lesmes, George F.

Stock material or miscellaneous articles

Composite

Of silicon containing

148 631, 148 335, 427 96, B05D 512, H01L 21306

Patent

active

044290110

ABSTRACT:
A composite conductive structure which includes an insulating substrate on which is provided a conductor of molybdenum covered by a layer of molybdenum nitride and a method of making the structure are described. The method includes heating the conductor of molybdenum in an atmosphere of ammonia in the range from about 400.degree. C. to 850.degree. C. for a time to cause the atmosphere to react with the conductor to convert a portion of the conductor into molybdenum nitride.

REFERENCES:
patent: 3200015 (1965-08-01), Kuntz
patent: 3337375 (1967-08-01), Casey et al.
patent: 3619233 (1971-11-01), Hipp et al.
patent: 4333964 (1982-06-01), Ghezzo
patent: 4333965 (1982-06-01), Chow et al.
S. P. Ghosh, Nitrides of Molybdenum, Journal Indian Chem. Soc., vol. 29, No. 7, 1952.
H. Okabayashi et al., A Mo-Nitride/Mo Gate MOS Structure, Extended Abstracts of the Electrochemical Soc. Inc.-May 10-15, 1981, pp. 753-755.

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