Composite circuit of bipolar transistors and field effect transi

Details Composite circuit of bipolar transistors and field effect transi Composite circuit of bipolar transistors and field effect transi

1987-01-02

1989-02-28

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307451, 307570, H03K 1902, H03K 19094, H03K 1760

Patent

active

048088501

ABSTRACT:
A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type connected to the output and an emitter of the first conductivity type connected to a second potential, a field effect transistor of a second conductivity type with a gate connected to an input, a source connected to a third potential and a drain connected to the base of the first bipolar transistor, a field effect transistor of the first conductivity type with a gate connected to the input, a drain connected to the base of the first bipolar transistor, and a source connected to the base of the second bipolar transistor, and a unidirectional element inserted between the output and the drain of the field effect transistor of the first conductivity type and having a direction of rectification opposite to that of the PN junction formed between the base and emitter of the first bipolar transistor.

REFERENCES:
patent: 4616146 (1986-10-01), Lee et al.

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