Composite channel field effect transistor and method of fabricat

Details Composite channel field effect transistor and method of fabricat Composite channel field effect transistor and method of fabricat

1977-06-06

1978-01-24

James, Andrew J.

357 54, 357 91, H01L 2978, H01L 2934

Patent

active

040706877

ABSTRACT:
An improved composite channel field effect transistor and method of fabrication, which exhibits high density characteristics and yields high performance with less sensivity to threshold shift due to hot electrons when operated at high source to drain voltage levels.

REFERENCES:
patent: 3745425 (1973-10-01), Beale et al.
patent: 3806773 (1974-04-01), Watanabe
patent: 3877055 (1975-04-01), Fisher et al.
patent: 3883372 (1975-05-01), Lin
patent: 3909320 (1975-09-01), Gauge et al.
patent: 3950738 (1976-04-01), Hayashi et al.
patent: 3950777 (1976-04-01), Tarui et al.
patent: 3996655 (1976-12-01), Cunningham
IBM Technical Disclosure Bulletin, Metal-Oxide Semiconductor Field effect Transistor Structure by Young vol. 17 No. 4, Sept. 1974, pp. 1208 and 1209.

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