Composite article for a semiconductor device

Details Composite article for a semiconductor device Composite article for a semiconductor device

1982-09-30

1984-05-22

O'Keefe, Veronica

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

148 616, 148174, H01L 2900

Patent

active

044502087

ABSTRACT:
A composite article, and method for producing the same, said article being adapted for use as a semiconductor device. The composite article comprises and is produced by depositing on a first layer of metal having an irregular metal surface a second layer consisting essentially of a phosphate, silicate or a combination thereof, said second layer having a thickness sufficient to provide a smooth surface over said irregular metal surface and a third layer of a conventional semiconductor material coated on said smooth surface.

REFERENCES:
patent: 3703419 (1972-11-01), Esler
patent: 3961997 (1976-06-01), Chu
patent: 4273594 (1981-06-01), Heller et al.
T. L. Chu, J. Vac. Sci. Technol. vol. 12, No. 4, Jul./Aug. 1975, pp. 912-915.
T. L. Chu et al., J. Electrochem. Soc. 122(12) Dec. 1975, pp. 1681-1685.

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