Amplifiers – With semiconductor amplifying device – Including distributed parameter-type coupling
Patent
1983-02-28
1985-10-15
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including distributed parameter-type coupling
330277, 330 54, 333128, H03F 360, H03F 316, H01P 512
Patent
active
045477450
ABSTRACT:
A power combiner has been described incorporating N transmission lines each having a quarter wavelength or multiple thereof for a frequency within a predetermined frequency range where the input of each transmission line has a resistor coupled thereto with the other ends of the resistors coupled together using inductance and capacitance to compensate for the distances between the resistors to provide a floating node which is low impedance in the predetermined frequency range. A composite amplifier is described on gallium arsenide wherein a power divider and power combiner are coupled to a plurality of MESFET's and wherein each input and output of the power combiner and power divider have a resistive load with respect to the MESFET while including a matching circuit and wherein each input of the combiner has a resistor coupled to a first floating node and each output of the divider has a resistor coupled to a second floating node. The invention overcomes the problem of a composite amplifier where many elemental amplifiers must be driven and their output signals combined at frequencies where the physical layout would provide phase differences such as in a layout of parallel cells on a flat surface of a substrate.
REFERENCES:
patent: 4234854 (1980-11-01), Schellenberg et al.
patent: 4291279 (1981-09-01), Buck
Wilkinson, E. J., "An N-Way Hybrid Power Divider", IRE Transaction MTT-8, Jan. 1960.
Hindin, "Gallium Arsenside Analog JC's Rival Discrete Device for Military and Commercial Use", Electronics, Feb. 1982.
Boire Daniel C.
Degenford James E.
Freitag Ronald G.
Mullins James B.
Sutcliff W. G.
Wan G.
Westinghouse Electric Corp.
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