Component interconnect with substrate shielding

Active solid-state devices (e.g. – transistors – solid-state diode – Superconductive contact or lead – Transmission line or shielded

Reexamination Certificate

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Details

C257S663000, C257S664000, C257SE23114, C257S531000, C333S247000

Reexamination Certificate

active

07411279

ABSTRACT:
An example of a circuit structure may include a first dielectric layer having first and second surfaces, and a channel extending at least partially between the first and second surfaces and along a length of the first dielectric layer. First and second conductive layers may be disposed on respective portions of the first and second surfaces. A first conductor, having an end, may be disposed on a surface of the first dielectric layer, including at least a first portion extending around at least a portion of the conductor end. The second conductive layer may line the channel extending around a portion of the conductor end. Some examples may include a stripline having a second conductor connected to the first conductor. Some examples may include a cover having a wall positioned on the first dielectric over the second conductor.

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