Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-03-20
2007-03-20
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S753000, C257SE21221, C257SE21223
Reexamination Certificate
active
10500310
ABSTRACT:
The present invention relates to a method for fabricating a cavity in substrate for a component for electromagnetic waves, the method comprising providing said cavity by removal of material from said substrate by removal of material by immersing the substrate in a liquid bath of a chemical etchant, so that resultant cavity has a top and a bottom side and sidewalls, and said cavity at one of said top and/or bottom sides exhibits an at least a four sided opening having an opening with at least two different adjacent angles. The invention also relates to the component for microwave applications.
REFERENCES:
patent: 5821836 (1998-10-01), Katehi et al.
patent: 6362706 (2002-03-01), Song et al.
patent: 2002/0008078 (2002-01-01), Hatamura et al.
patent: 2004/0056560 (2004-03-01), Wang et al.
Bergstedt Leif
Gevorgian Spartak
Gustafsson Marica
Hoang Quoc
Nixon & Vanderhye P.C.
Telefonaktiebolaget LM Ericsson (publ)
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