Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-30
2011-08-30
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S154000, C257SE27081, C257SE21632
Reexamination Certificate
active
08008664
ABSTRACT:
An electrical component, in the crystalline semiconductor body of which several CMOS transistors in high-voltage or low-voltage technology are formed. The individual CMOS transistors are separated from one another by insulation regions. On one insulation region, a thin-film transistor is formed, having a gate that is realized simultaneously with the gates of the CMOS transistors from the same polysilicon layer. The gate oxide of the thin-film transistor, just like a second polysilicon layer for source drain and body of the thin-film transistor, can be produced together with the structural elements already present in the CMOS process.
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S. Shunji et al., “Laser-Recrystallized Polycrystalline-Silicon Thin-Film Transistors with Low Leakage Current and High Switching Ratio”, IEEE Electron Device Letters, vol. EDL-8, No. 9, pp. 425-427, Sep. 1987.
austriamicrosystms AG
Cozen O'Connor
Patton Paul E
Smith Zandra
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